Metalorganic chemical vapor deposition of Al2O3 using trimethylaluminum and O2 precursors: Growth mechanism and crystallinity
- 28 September 2014
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 408, 78-84
- https://doi.org/10.1016/j.jcrysgro.2014.09.029
Abstract
No abstract availableKeywords
Funding Information
- Office of Naval Research
- University of California, Santa Barbara
- National Science Foundation
- Materials Research Science and Engineering Center, Harvard University
- Office of Naval Research
This publication has 44 references indexed in Scilit:
- In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed chargeApplied Physics Letters, 2014
- In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitorsApplied Physics Letters, 2013
- High mobility In0.53Ga0.47As quantum-well metal oxide semiconductor field effect transistor structuresJournal of Applied Physics, 2012
- CVD TiC/alumina and TiN/alumina multilayer coatings grown on sapphire single crystalsInternational Journal of Refractory Metals and Hard Materials, 2010
- Metalorganic Chemical Vapor Deposition of Al2O3 Thin Films from Dimethylaluminumhydride and O2Japanese Journal of Applied Physics, 2010
- Atmospheric pressure chemical vapor deposition mechanism of Al2O3 film from AlCl3 and O2Journal of Crystal Growth, 2009
- Deposition, microstructure and properties of texture-controlled CVD α-Al2O3 coatingsInternational Journal of Refractory Metals and Hard Materials, 2005
- Growth and characterization of Al2O3 gate dielectric films by low-pressure metalorganic chemical vapor depositionMicroelectronic Engineering, 2002
- MOCVD of Al2O3 Films Using New Dialkylaluminum Acetylacetonate Precursors: Growth Kinetics and Process YieldsChemical Vapor Deposition, 2001
- The Effect of Oxidation Source Gas on Epitaxial Al 2O 3 Films on SiJapanese Journal of Applied Physics, 1997