Growth and characterization of Al2O3 gate dielectric films by low-pressure metalorganic chemical vapor deposition
- 21 November 2002
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 66 (1-4), 842-848
- https://doi.org/10.1016/s0167-9317(02)01009-2
Abstract
No abstract availableKeywords
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