The Effect of Oxidation Source Gas on Epitaxial Al 2O 3 Films on Si
- 1 December 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (12R)
- https://doi.org/10.1143/jjap.36.7126
Abstract
Epitaxial growth of Al2O3 on Si has been investigated by using ultrahigh-vacuum chemical vapor deposition (UHV-CVD). Film thickness uniformity in a wafer was progressed by UHV-CVD method with a hot wall heating system, but the film surface morphology of grown films was worse than that grown by low-pressure chemical vapor deposition (LP-CVD) with a cold wall heating system. Reaction between Si surface and N2O was carried out by LP-CVD and UHV-CVD, and it is supposed that N2O gas etches the Si surface rather than O2 gas at the initial growth stage in UHV-CVD. High crystalline quality of Al2O3 films was obtained at 1000°C by changing the oxidation source gas from N2O to O2. Al2O3 film crystalline quality and electrical property were improved by using O2 gas.Keywords
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