DC and low-frequency noise characteristics of SiGe p-channel FETs designed for 0.13-μm technology
- 1 July 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 46 (7), 1514-1517
- https://doi.org/10.1109/16.772504
Abstract
No abstract availableKeywords
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