Low frequency noise in quantum-well GexSi1−x PMOSFET's
- 31 October 1991
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 15 (1-4), 19-22
- https://doi.org/10.1016/0167-9317(91)90174-c
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- A gate-quality dielectric system for SiGe metal-oxide-semiconductor devicesIEEE Electron Device Letters, 1991
- Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOSIEEE Electron Device Letters, 1991