Hole confinement and its impact on low-frequency noise in SiGe pFETs on sapphire
- 22 November 2002
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Modeling of hole confinement gate voltage range for SiGe channel p-MOSFETsSolid-State Electronics, 1996
- A simple derivation of Reimbold's drain current spectrum formula for flicker noise in MOSFETsSolid-State Electronics, 1987
- Improvement of crystalline quality of epitaxial Si layers by ion-implantation techniquesApplied Physics Letters, 1979
- Low frequency noise in MOS transistors—I TheorySolid-State Electronics, 1968