High-mobility modulation-doped SiGe-channel p-MOSFETs
- 1 August 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (8), 447-449
- https://doi.org/10.1109/55.119161
Abstract
A novel subsurface SiGe-channel p-MOSFET is demonstrated in which modulation doping is used to control the threshold voltage without degrading the channel mobility. A novel device design consisting of a graded SiGe channel, an n/sup +/ polysilicon gate, and p/sup +/ modulation doping is used. A boron-doped layer is located underneath the graded and undoped SiGe channel to minimize process sensitivity and maximize transconductance. Low-field hole mobilities of 220 cm/sup 2//V-s at 300 K and 980 cm/sup 2//V-s at 82 K were achieved in functional submicrometer p-MOSFETs.Keywords
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