Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS
- 1 April 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (4), 154-156
- https://doi.org/10.1109/55.75748
Abstract
The authors demonstrate the feasibility of a p-channel quantum-well MOSFET on a Ge/sub x/Si/sub 1-x//Si heterostructure. The advantages of the enhancement-mode p-channel MOSFET device compared to GeSi MODFETs are its high impedance, channel mobility, and channel transconductance. The device shows good saturation and cutoff behaviour. A saturation transconductance of 64 mS/mm was measured for a 0.7- mu m channel device at a drain-to-source voltage of -2.5 V. The channel mobility was found to be higher than that of a similarly processed Si p-channel MOSFET.Keywords
This publication has 10 references indexed in Scilit:
- Wet oxidation of GeSi strained layers by rapid thermal processingApplied Physics Letters, 1990
- 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistorsIEEE Electron Device Letters, 1990
- Heterojunction bipolar transistors using Si-Ge alloysIEEE Transactions on Electron Devices, 1989
- Oxidation studies of SiGeJournal of Applied Physics, 1989
- Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processingIEEE Electron Device Letters, 1989
- Resonant tunneling through a Si/GexSi1−x/Si heterostructure on a GeSi buffer layerApplied Physics Letters, 1988
- Subhalf-micrometer p-channel MOSFET's with 3.5-nm gate Oxide fabricated using X-ray lithographyIEEE Electron Device Letters, 1987
- Physics and applications of GexSi1-x/Si strained-layer heterostructuresIEEE Journal of Quantum Electronics, 1986
- Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET'sIEEE Electron Device Letters, 1986
- Two-dimensional electronic systems for high-speed device applicationsSurface Science, 1984