Electrical Effects of a Single Extended Defect in MOSFETs

Abstract

The electrostatic and leakage effects of extended defects on Si and Ge MOSFETs are investigated. A technology computer-aided design model of extended defects is developed based upon measured device electrical properties. A single extended defect is introduced into simulated 2-D planar and 3-D FinFET structures. It is found that a 2-D extended defect is a source of variability in planar transistors, with the electrical effects depending on its position along the channel. A 2-D extended defect increases the threshold voltage and subthreshold swing when it is in the channel and increases the leakage current when it is in the drain. The dislocation effect on transistor characteristics increases with decreasing transistor width. The effect is less pronounced in FinFETs due to the well-controlled electrostatics and the small dislocation volume.