Influence of dislocations in strained Si∕relaxed SiGe layers on n+∕p-junctions in a metal-oxide-semiconductor field-effect transistor technology
- 4 November 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (19), 192112
- https://doi.org/10.1063/1.2128490
Abstract
We present an investigation of junction leakage in highly doped n + ∕ p -junctions, fabricated in strained silicon/relaxed SiGe substrates. The leakage is shown to scale linearly with the threading dislocation density of the virtual substrate, which allows to estimate minority carrier generation lifetimes in good agreement with literature values. Even the highest-defective substrates in this work give a junction leakage density below 100 mA ∕ cm 2 , and are not expected to significantly increase the power consumption of metal-oxide-semiconductor field-effect transistor (MOSFET) technologies. Threading dislocations will increase the junction leakage by ∼ 1 nA in a small number of transistors in MOSFET circuits, but are not expected to have a negative impact on yield.Keywords
This publication has 10 references indexed in Scilit:
- Study of recombination and transport characteristics in strain-relaxed Si–SiGe layersSemiconductor Science and Technology, 2005
- Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility transistorsJournal of Physics: Condensed Matter, 2005
- N+/P and P+/N Junctions in Strained Si on Strain Relaxed SiGe Buffers: the Effect of Defect Density and Layer StructureMRS Proceedings, 2005
- Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistorsJournal of Applied Physics, 2004
- Growth of strained Si and strained Ge heterostructures on relaxed Si1−xGex by ultrahigh vacuum chemical vapor depositionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004
- Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substratesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001
- Impact of a high electric field on the extraction of the generation lifetime from the reverse generation current component of shallow n/sup +/-p-well diodesIEEE Transactions on Electron Devices, 2001
- Correlation between leakage current density and threading dislocation density in SiGe p-i-n diodes grown on relaxed graded buffer layersApplied Physics Letters, 2001
- Electron trapping kinetics at dislocations in relaxed Ge0.3Si0.7/Si heterostructuresJournal of Applied Physics, 1995
- Changes in electrical device characteristics during the in situ formation of dislocationsApplied Physics Letters, 1993