Defect assessment and leakage control in Ge junctions
- 1 August 2014
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 125, 33-37
- https://doi.org/10.1016/j.mee.2014.01.012
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Germanium N and P Multifin Field-Effect Transistors With High-Performance Germanium (Ge) ${\rm p}^{+}/{\rm n}$ and ${\rm n}^{+}/{\rm p}$ Heterojunctions Formed on Si SubstrateIEEE Transactions on Electron Devices, 2013
- Challenges and opportunities in advanced Ge pMOSFETsMaterials Science in Semiconductor Processing, 2012
- Trap-Assisted Tunneling in Deep-Submicron Ge pFET JunctionsECS Transactions, 2010
- On the Temperature and Field Dependence of Trap-Assisted Tunneling Current in Ge $\hbox{p}^{+}\hbox{n}$ JunctionsIEEE Electron Device Letters, 2009
- Selective Epitaxial Growth of Germanium on Si Wafers with Shallow Trench Isolation: An Approach for Ge Virtual SubstratesECS Transactions, 2008
- Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p $+/$n JunctionsIEEE Transactions on Electron Devices, 2008
- Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical PerformanceJournal of the Electrochemical Society, 2008
- Leakage Current Control in Recessed SiGe Source/Drain JunctionsJournal of the Electrochemical Society, 2007
- Diffusion, activation, and recrystallization of boron implanted in preamorphized and crystalline germaniumApplied Physics Letters, 2005
- Deep Level Transient Fourier Spectroscopy (DLTFS)—A technique for the analysis of deep level propertiesSolid-State Electronics, 1988