Influences of Charged Dislocations on Performance of III-V Compound Semiconductor FinFETs
- 1 October 2013
- journal article
- Published by Trans Tech Publications, Ltd. in Solid State Phenomena
- Vol. 205-206, 429-434
- https://doi.org/10.4028/www.scientific.net/ssp.205-206.429
Abstract
We present a model for charged dislocations effects on III-V compound semiconductor based FinFETs performance. The model is developed to obtain momentum relaxation time and, from it, key device performance parameters such as effective mobility, threshold voltage, and finally saturation drain current. We find out that charged threading edge dislocation density of a FinFET channel should be smaller than about 107 cm-2 to ignore the dislocation scattering impact on the device performance which is roughly one order more strict condition than previously known condition for wurtzite GaN.Keywords
This publication has 12 references indexed in Scilit:
- Nanometre-scale electronics with III–V compound semiconductorsNature, 2011
- Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistorsNature, 2011
- Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfacesJournal of Applied Physics, 2010
- Passivation of dislocations in GaAs grown on Si substrates by phosphine (PH3) plasma exposureApplied Physics Letters, 2001
- Dislocation scattering in a two-dimensional electron gasApplied Physics Letters, 2000
- Dislocation Scattering in GaNPhysical Review Letters, 1999
- Scattering of electrons at threading dislocations in GaNJournal of Applied Physics, 1998
- Dislocations and related traps in p-InGaAs/GaAs lattice-mismatched heterostructuresApplied Physics Letters, 1996
- Electrical and structural properties of dislocations confined in a InGaAs/GaAs heterostructureJournal of Applied Physics, 1993
- Charged dislocation induced optical absorption in GaAsJournal of Applied Physics, 1989