Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates
- 15 January 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (3), 267-269
- https://doi.org/10.1063/1.1339846
Abstract
InAs quantum dots(QDs) with a high density of 9×10 10 cm −2 are formed on InAlGaAs layer/InP (311)B substrates. Lasers having five-period stacked InAs QD layers are operated in the ground state (λ≈1.6 μm) at room temperature, and the maximal modal gain of the ground state is measured to be 20 cm −1 . We obtained a threshold current density of 380 A/cm 2 at room temperature, and observed the temperature-insensitive threshold current at temperatures from 77 to 220 K.This publication has 15 references indexed in Scilit:
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