Low threshold quantum dot injection laser emitting at 1.9 [micro sign]m
- 1 January 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (7), 670-672
- https://doi.org/10.1049/el:19980373
Abstract
Self-organised InAs quantum dots inserted in an (In, Ga)As matrix lattice matched to an InP substrate are used as an active region in an injection laser. Low threshold (11.4 A/cm2) lasing at 1.894 µm (77 K) via the states of the quantum dots is obtained. A material gain of the order of 104 cm–1 is estimated.Keywords
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