Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures
- 28 February 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (9), 1104-1106
- https://doi.org/10.1063/1.125952
Abstract
3 pages, 3 figures.-- PACS: 81.05.Ea; 68.65.+g;\ud 78.55.Cr; 78.66.Fd; 68.35.Bs; 68.55.Jk; 81.15.Hi; 81.15.EfWe have studied the influence of InP buffer-layer morphology in the formation of InAs nanostructures grown on InP(001) substrates by solid-source molecular-beam epitaxy. Our results demonstrate that when InP buffer layers are grown by atomic-layer molecular-beam epitaxy, InAs quantum dot-like structures are formed, whereas InP buffer layers grown by MBE produce quantum-wire-like structures. The optical properties of these corrugated structures make them potential candidates for their use in light-emitting devices at 1.55 µm.The authors wish to acknowledge the Spanish\ud ‘‘CICYT’’ for financial support under Project No. TIC96-\ud 1020-C02.Peer revieweKeywords
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