We present results of room temperature photoluminescence (PL) emission from a 0‐dimensional system in the ∼1.4 to ∼1.7 μm spectral region. Molecular beam epitaxy was used to grow InAs self‐assembled quantum dots in AlInAs on an InP substrate. Preliminary characterizations have been performed using PL and transmission electron microscopy. The low temperatures PL spectra also display excited state emission and state filling as the excitation intensity is increased.