High-density InAs nanowires realized in situ on (100) InP
- 23 August 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (8), 1173-1175
- https://doi.org/10.1063/1.124633
Abstract
High-density InAsnanowires embedded in an In 0.52 Al 0.48 As matrix are fabricatedin situ by molecular beam epitaxy on (100) InP. The average cross section of the nanowires is 4.5×10 nm2. The linear density is as high as 70 wires/μm. The spatial alignment of the multilayer arrays exhibit strong anticorrelation in the growth direction. Large polarizationanisotropic effect is observed in polarized photoluminescence measurements.Keywords
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