Solid state reaction of ruthenium with silicon carbide, and the implications for its use as a Schottky contact for high temperature operating Schottky diodes
- 1 February 2014
- journal article
- Published by Elsevier BV in Materials Science and Engineering B
- Vol. 181, 9-15
- https://doi.org/10.1016/j.mseb.2013.11.002
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Synthesis of graphene on silicon carbide substrates at low temperatureCarbon, 2009
- Investigation of RuO2/4H–SiC Schottky diode contacts by deep level transient spectroscopyChemical Physics Letters, 2006
- Deep energy levels in RuO2∕4H–SiC Schottky barrier structuresApplied Physics Letters, 2006
- Formation of surface states during Schottky barrier fabrication on Al-doped p-type 6H–SiCDiamond and Related Materials, 2004
- Thermal stability of Ru, Pd and Al Schottky contacts to p ‐type 6H‐SiCphysica status solidi (c), 2004
- SIMS, RBS and glancing incidence X-ray diffraction studies of thermally annealed Ru/β-SiC interfacesApplied Surface Science, 2003
- Structural and electrical characterisation of titanium and nickel silicide contacts on silicon carbideMicroelectronic Engineering, 2002
- Analysis of Schottky Barrier Heights of Metal/SiC Contacts and Its Possible Application to High-Voltage Rectifying Devicesphysica status solidi (a), 1997
- Raman spectra of carbon-based materials excited at 1064 nmCarbon, 1995
- Algorithms for the rapid simulation of Rutherford backscattering spectraNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985