Deep energy levels in RuO2∕4H–SiC Schottky barrier structures
Open Access
- 10 April 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (15)
- https://doi.org/10.1063/1.2195775
Abstract
RuO2/4H–SiC Schottky diode structures based on n-type 4H–SiC (7×1017 cm–3) with stoichiometric RuO2 Schottky contacts were characterized by electrical capacitance-voltage and current voltage methods and deep-level transient spectroscopy in order to determine their unique semiconducting and electronic properties. The RuO2 films exhibited electrical conductivity of 60 µ cm for Schottky barrier heights of approximately 0.88 eV. These Schottky structures revealed two deep energy levels with thermal activation energies of 0.56 and 0.85 eV with reference to the conduction band.published_or_final_versioThis publication has 19 references indexed in Scilit:
- Formation of surface states during Schottky barrier fabrication on Al-doped p-type 6H–SiCDiamond and Related Materials, 2004
- Investigation of IrO2 and RuO2 Schottky contacts on AlGaN/GaN heterostructureJournal of Applied Physics, 2004
- Evaluation of Thermal Stability for CMOS Gate Metal MaterialsJournal of the Electrochemical Society, 2004
- Schottky–ohmic transition in nickel silicide/SiC-4H system: is it really a solved problem?Microelectronic Engineering, 2003
- SiC power Schottky and PiN diodesIEEE Transactions on Electron Devices, 2002
- Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient SpectroscopyMaterials Science Forum, 2002
- Leakage current in PZT films with sputtered RuOx electrodesSolid-State Electronics, 2000
- High-densityandCrystalline structures and equations of statePhysical Review B, 1999
- Growth-related structural defects in seeded sublimation-grown SiCDiamond and Related Materials, 1997
- Photoluminescence of Radiation Defects in Ion-ImplantedSiCPhysical Review B, 1972