Investigation of RuO2/4H–SiC Schottky diode contacts by deep level transient spectroscopy
- 5 October 2006
- journal article
- Published by Elsevier BV in Chemical Physics Letters
- Vol. 429 (4-6), 617-621
- https://doi.org/10.1016/j.cplett.2006.08.084
Abstract
No abstract availableKeywords
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