1.3 µm InGaAs/InAlGaAs Strained Quantum Well Lasers on InGaAs Ternary Substrates

Abstract

InGaAs/InAlGaAs strained quantum well lasers with 1.3 µm wavelength have been realized on In_0.31Ga_0.69As ternary substrates for the first time, owing to the increased indium composition of the substrates. A temperature-insensitive slope efficiency of -0.007 dB/K has been observed. The threshold current density (J _th) at 20°C and characteristic temperature (T ₀) are 677 A/cm² and 76 K, respectively. The dependence of T ₀ on J _th per well suggests that higher T ₀ would be achieved by fabricating the lasers on InGaAs substrates of improved quality, thereby decreasing J _th.