1.3 [micro sign]m InAsP/InAlGaAs MQW lasers for high-temperature operation
- 1 January 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (12), 1048-1049
- https://doi.org/10.1049/el:19970671
Abstract
InAsP/InAlGaAs strained multiquantum-well (MQW) 1.3 µm lasers with a large conduction band discontinuity are proposed and demonstrated for the first time. An InAsP/InAlGaAs MQW layer with high structural and optical quality was obtained by gas-source molecular beam epitaxy growth combined with post-growth 650°C rapid thermal annealing. The lasers exhibited a low threshold current density of 1.1 kA/cm2 with an excellent characteristic temperature as high as 116 K.Keywords
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