Bridgman growth of compositionally graded InxGa1 − xAs (x = 0.05−0.30) single crystals for use as seeds for In0.25Ga0.75As crystal growth
- 1 March 1997
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 173 (1-2), 42-50
- https://doi.org/10.1016/s0022-0248(96)00803-2
Abstract
No abstract availableKeywords
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