High-power and high-efficiency 1.3 µm InAsP compressively-strained MQW lasers at high temperatures
- 30 March 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (7), 556-557
- https://doi.org/10.1049/el:19950400
Abstract
A high output power of 37 mW and high slope efficiency of more than 0.55 W/A at 90°C has been obtained by using 1.05 µm InGaAsP barrier layers with optimised composition for 1.3 µm InAsP compressively-strained MQW laser diodes.Keywords
This publication has 3 references indexed in Scilit:
- The effects of strain on the threshold current density in InGaAsP/InP strained-layer single-quantum-well lasersJournal of Applied Physics, 1994
- High-performance λ=1.3 μm InGaAsP-InP strained-layer quantum well lasersJournal of Lightwave Technology, 1994
- High temperature characteristics of InGaAsP/InP laser structuresApplied Physics Letters, 1993