Ultrahigh temperature and ultrahigh speed operation of 1.3 µm strain-compensated AlGaInAs/InP uncooled laser diodes
- 31 August 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (18), 1584-1585
- https://doi.org/10.1049/el:19951103
Abstract
High performance 1.3 µm uncooled lasers with excellent high temperature and high speed characteristics are reported. A CW characteristic temperature of 105 K between 25 and 85°C, a maximum CW operating temperature above 170°C, and an intrinsic 3 dB modulation bandwidths estimated at ≥ 23 GHz at 25°C and 15 GHz at 85°C, have been achieved. These values are among the best obtained for 1.3 µm AlGaInAs laser devices.Keywords
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