5.0 kV breakdown-voltage vertical GaN p–n junction diodes
- 23 February 2018
- journal article
- conference paper
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 57 (4S), 04FG09
- https://doi.org/10.7567/jjap.57.04fg09
Abstract
A high breakdown voltage of 5.0 kV has been achieved for the first time in vertical GaN p–n junction diodes by using our newly developed guard-ring structures. A resistance device was inserted between the main diode portion and the guard-ring portion in a ring-shaped p–n diode to generate a voltage drop over the resistance device by leakage current flowing through the guard-ring portion under negatively biased conditions before breakdown. The voltage at the outer mesa edge of the guard-ring portion, where the electric field intensity is highest and the destructive breakdown usually occurs, is decreased by the voltage drop, so the electric field concentration in the portion is reduced. By adopting this structure, the breakdown voltage (V B) is raised by about 200 V. Combined with a low measured on-resistance (R on) of 1.25 mΩ cm2, Baliga's figure of merit was as high as 20 GW/cm2.Keywords
This publication has 26 references indexed in Scilit:
- High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate ProcessJapanese Journal of Applied Physics, 2013
- Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN SubstratesIEEE Electron Device Letters, 2011
- Over 1.0 kV GaN p–n junction diodes on free‐standing GaN substratesPhysica Status Solidi (a), 2011
- High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer TechnologyIEEE Electron Device Letters, 2010
- Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation methodJournal of Crystal Growth, 2008
- Thermal and electrical properties of high‐quality freestanding GaN wafers with high carrier concentrationphysica status solidi (c), 2007
- High-breakdown-voltage pn-junction diodes on GaN substratesJournal of Crystal Growth, 2007
- Accurate dependence of gallium nitride thermal conductivity on dislocation densityApplied Physics Letters, 2006
- High performance GaN pin rectifiers grown on free-standing GaN substratesElectronics Letters, 2006
- Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted SeparationJapanese Journal of Applied Physics, 2003