Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates
- 13 October 2011
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 32 (12), 1674-1676
- https://doi.org/10.1109/led.2011.2167125
Abstract
This letter describes a new two-step electrode process on p-GaN and characteristics of GaN p-n junction diodes on free-standing GaN substrates with low specific ON-resistance Rοn and high breakdown voltage VB. We develop a two-step process for anode electrodes in order to avoid plasma damage to the p+-GaN contact layer during the sputtering process. The specific ON-resistance is further improved due to a new low-damage process. The breakdown voltage of the diodes with the field-plate (FP) structure is over 1100 V, and the leakage current was low, i.e., in the range of 10-9 A. The specific ON-resistance of the diodes of 50 μm in diameter with the FP structure was 0.4 mΩ · cm2. Baliga's figure of merit (VB2/Ron) of 3.0 GW/cm2 is obtained. These are the best values ever reported among those achieved by GaN p-n junction diodes on free-standing GaN substrates.Keywords
This publication has 11 references indexed in Scilit:
- Over 1.0 kV GaN p–n junction diodes on free‐standing GaN substratesPhysica Status Solidi (a), 2011
- Numerical Analysis of Forward-Current/Voltage Characteristics of Vertical GaN Schottky-Barrier Diodes and p-n Diodes on Free-Standing GaN SubstratesIEEE Transactions on Electron Devices, 2011
- High-Current-Gain Direct-Growth GaN/InGaN Double Heterojunction Bipolar TransistorsIEEE Transactions on Electron Devices, 2010
- Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation methodJournal of Crystal Growth, 2008
- High-breakdown-voltage pn-junction diodes on GaN substratesJournal of Crystal Growth, 2007
- Growth and characterization of GaN PiN rectifiers on free-standing GaNApplied Physics Letters, 2005
- Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted SeparationJapanese Journal of Applied Physics, 2003
- Plasma damage in p-GaNJournal of Electronic Materials, 2000
- High-voltage GaN pin vertical rectifiers with 2 [micro sign]m thick i-LayerElectronics Letters, 2000
- Electrical effects of plasma damage in p-GaNApplied Physics Letters, 1999