Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method
- 4 January 2008
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 310 (1), 5-7
- https://doi.org/10.1016/j.jcrysgro.2007.10.014
Abstract
No abstract availableKeywords
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