High performance GaN pin rectifiers grown on free-standing GaN substrates
- 1 January 2006
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 42 (22), 1313-1314
- https://doi.org/10.1049/el:20062261
Abstract
Gallium nitride pin rectifiers grown on bulk GaN substrate have been fabricated and characterised. The device structures were grown by metal organic chemical vapour deposition (MOCVD) on free-standing GaN substrates. The diode structure consisted of an n+-GaN layer, followed by a 2.5 µm unintentionally doped i-GaN layer, and a p-type GaN layer capped with a p++-GaN cap layer. The mesa-structure pin diodes exhibited a blocking voltage as large as Vr∼−540 V, and a reverse current density of Ir∼0.1 A/cm2 at Vr∼−500 V. The forward voltage drop is only 4.4 V at a forward current density of ∼100A/cm2, with an on-resistance of 3 mΩ · cm2 for a circular device with an 80 µm mesa diameter. The breakdown voltage and on-resistance are believed to be the best values reported for vertical mesa GaN pin rectifiers grown on bulk GaN substrates with comparable i-layer thickness.Keywords
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