Over 1.0 kV GaN p–n junction diodes on free‐standing GaN substrates
- 26 May 2011
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 208 (7), 1535-1537
- https://doi.org/10.1002/pssa.201000976
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation methodJournal of Crystal Growth, 2008
- High-breakdown-voltage pn-junction diodes on GaN substratesJournal of Crystal Growth, 2007
- High performance GaN pin rectifiers grown on free-standing GaN substratesElectronics Letters, 2006
- Growth and characterization of GaN PiN rectifiers on free-standing GaNApplied Physics Letters, 2005
- Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiersApplied Physics Letters, 2003
- Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted SeparationJapanese Journal of Applied Physics, 2003
- Plasma damage in p-GaNJournal of Electronic Materials, 2000