Temperature dependence of resistive switching characteristics in NiO(111) films on metal layer
- 15 September 2020
- journal article
- research article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 54 (1), 015101
- https://doi.org/10.1088/1361-6463/abb8ac
Abstract
Dense and uniform NiO(111) films are deposited on a Pt layer via magnetron sputtering. At temperatures of up to 80 ℃, the Ag/NiO(111)/Pt memory cells exhibit a stable bipolar resistive switching behaviour with a switching time of < 40 µs and a retention time of > 104 s. Both the Arrhenius-type and Schottky-type current-temperature plots are well fitted by linear relationships, revealing that the electron transport in the high resistance state is governed by the Schottky tunnelling mechanism. The XPS depth profiles demonstrate that the NiO(111) films are highly oxygen deficient, and that oxygen-vacancy conductive filaments are responsible for the temperature-dependent resistive switching behaviour of the NiO(111) films.Funding Information
- Natural Science Foundation of Chongqing (grant No. cstc2019jcyj-msxmX0451)
- The Graduate Student Research Innovation Project of Chongqing (No.CYS20103)
- Scientific and Technological Research Program of Chongqing Municipal Education Commission (grant No. KJQN201800113)
This publication has 31 references indexed in Scilit:
- Bipolar Resistive Switching Behavior of a Pt/NiO/TiN Device for Nonvolatile Memory ApplicationsJapanese Journal of Applied Physics, 2012
- Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped SubstrateAdvances in Condensed Matter Physics, 2012
- Resistance Transition in NiO Thin Film and Its Temperature DependenceFerroelectrics, 2012
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structuresNature Materials, 2011
- Electrochemical metallization memories—fundamentals, applications, prospectsNanotechnology, 2011
- Temperature Instability of Resistive Switching on $ \hbox{HfO}_{x}$-Based RRAM DevicesIEEE Electron Device Letters, 2010
- Mechanism for bipolar resistive switching in transition-metal oxidesPhysical Review B, 2010
- Investigation of Interface Formed between Top Electrodes and Epitaxial NiO Films for Bipolar Resistance SwitchingJapanese Journal of Applied Physics, 2010
- Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured NanowiresJournal of the American Chemical Society, 2009
- Switching properties of thin Nio filmsSolid-State Electronics, 1964