Temperature Instability of Resistive Switching on $ \hbox{HfO}_{x}$-Based RRAM Devices
Top Cited Papers
- 15 March 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 31 (5), 476-478
- https://doi.org/10.1109/led.2010.2041893
Abstract
In this letter, the temperature instability of HfOx -based resistive switching memory is investigated. It is observed that with the increase of high temperature (up to 100 °C in this work), the leakage current of high-resistance state would increase, and the set/reset voltages would decrease. In addition, multibit switching exhibited at room temperature might not be retained with the increase of temperature. All these phenomena can be correlated with oxygen-vacancy-related trap formation and annihilation.Keywords
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