Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped Substrate

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Abstract
Epitaxial NiO film was grown on 0.7% Nb-doped substrates by pulsed laser deposition. TheI-Vcharacteristics of Ag/NiO/Nb-/In device show reproducible and pronounced bipolar resistive switching without forming process which was induced by the NiO/Nb- junctions, and the resistive switching ratio can reach 103at the read voltage of −0.5 V. Furthermore, the resistance states can be controlled by changing the max forward voltage, reverse voltage, or compliance current, indicating multilevel memories. These results were discussed by considering the role of carrier injection trapped/detrapped at the interfacial depletion region of the heterojunction.
Funding Information
  • National Natural Science Foundation of China (11074193, 51132001)