A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Top Cited Papers
- 10 July 2011
- journal article
- research article
- Published by Springer Science and Business Media LLC in Nature Materials
- Vol. 10 (8), 625-630
- https://doi.org/10.1038/nmat3070
Abstract
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