Tunnel Field-Effect Transistors: Prospects and Challenges
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Open Access
- 12 January 2015
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of the Electron Devices Society
- Vol. 3 (3), 88-95
- https://doi.org/10.1109/jeds.2015.2390591
Abstract
The tunnel field-effect transistor (TFET) is considered a future transistor option due to its steep-slope prospects and the resulting advantages in operating at low supply voltage (V DD ). In this paper, using atomistic quantum models that are in agreement with experimental TFET devices, we are reviewing TFETs prospects at L G = 13 nm node together with the main challenges and benefits of its implementation. Significant power savings at iso-performance to CMOS are shown for GaSb/InAs TFET, but only for performance targets which use lower than conventional V DD . Also, P-TFET current-drive is between 1× to 0.5× of N-TFET, depending on choice of I OFF and V DD . There are many challenges to realizing TFETs in products, such as the requirement of high quality III-V materials and oxides with very thin body dimensions, and the TFET's layout density and reliability issues due to its source/drain asymmetry. Yet, extremely parallelizable products, such as graphics cores, show the prospect of longer battery life at a cost of some chip area.This publication has 18 references indexed in Scilit:
- A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFETIEEE Transactions on Electron Devices, 2014
- Monolayer Transition Metal Dichalcogenide Channel-Based Tunnel TransistorIEEE Journal of the Electron Devices Society, 2013
- Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs—Part I: Model Description and Single Trap Analysis in Tunnel-FETsIEEE Transactions on Electron Devices, 2013
- Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2011
- Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2011
- Comparison of power and performance for the TFET and MOSFET and considerations for P-TFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2011
- On the gate-stack origin threshold voltage variability in scaled FinFETs and multi-FinFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2010
- Low power circuit design based on heterojunction tunneling transistors (HETTs)Published by Association for Computing Machinery (ACM) ,2009
- Tunnel field-effect transistor without gate-drain overlapApplied Physics Letters, 2007
- Theory of band tails in heavily doped semiconductorsReviews of Modern Physics, 1992