Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications
- 1 December 2011
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 33.5.1-33.5.4
- https://doi.org/10.1109/iedm.2011.6131665
Abstract
Type II arsenide/antimonide compound semiconductor with highly staggered GaAs 0.35 Sb 0.65 /In 0.7 Ga 0.3 As hetero-junction is used to demonstrate hetero tunnel FET (TFET) with record high drive currents (I ON ) of 190μA/μm and 100μA/μm at V DS =0.75V and 0.3V, respectively (L G =150nm). In x Ga 1-x As (x=0.53, 0.7) homo-junction TFETs and GaAs 0.5 Sb 0.5 /In 0.53 Ga 0.47 As hetero TFET with moderate stagger are also fabricated with the same process flow for benchmarking. Measured and simulated TFET performance is benchmarked with 40nm strained Si MOS-FETs for 300mV logic applications.Keywords
This publication has 1 reference indexed in Scilit:
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