Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs—Part I: Model Description and Single Trap Analysis in Tunnel-FETs
- 2 August 2013
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 60 (9), 2795-2801
- https://doi.org/10.1109/ted.2013.2274196
Abstract
This paper and the companion work present a full quantum study of the influence of interface traps on the I-V characteristics of InAs nanowire Tunnel-field effect transistors (FETs) and MOSFETs. To this purpose, we introduced a description of interface traps in a simulator based on non equilibrium Green's function formalism, employing an 8 × 8 k·p Hamiltonian and accounting for phonon-scattering. In our model, traps can affect the I-V curves of the transistors both by modifying the device electrostatics and by directly participating the carrier transport. This paper investigates the impact of single trap on the I-V characteristics of Tunnel-FETs by varying the trap energy level, its volume and position, as well as the working temperature. Our 3-D self-consistent simulations show that: 1) even a single trap can deteriorate the inverse subthreshold slope of a nanowire InAs Tunnel-FET; 2) shallow traps have the largest impact on subthreshold slopes; and 3) the inelastic phonon-assisted tunneling through interface traps results in a temperature dependence of the otherwise temperature-independent Tunnel-FETs I-V characteristics.Keywords
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