Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2
Open Access
- 10 March 2021
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Applied Materials & Interfaces
- Vol. 13 (9), 11089-11095
- https://doi.org/10.1021/acsami.1c01734
Abstract
Ferroelectric memories based on hafnium oxide are an attractive alternative to conventional memory technologies due to their scalability and energy efficiency. However, there are still many open questions regarding the optimal material stack and processing conditions for reliable device performance. Here, we report on the impact of the sputtering process conditions of the commonly used TiN top electrode on the ferroelectric properties of Hf1-xZrxO2. By manipulating the deposition pressure and chemistry, we control the preferential orientation of the TiN grains between (111) and (002). We observe that (111) textured TiN is superior to (002) texturing for achieving high remanent polarization (P-r). Furthermore, we find that additional nitrogen supply during TiN deposition leads to >5x greater endurance, possibly by limiting the scavenging of oxygen from the Hf1-xZrxO2 film. These results help explain the large P-r variation reported in the literature for Hf1-xZrxO2/TiN and highlights the necessity of tuning the top electrode of the ferroelectric stack for successful device implementation.Funding Information
- Vetenskapsr?det (2016-6186, 2017-4108, 2018-05379)
- NanoLund, Lund University
This publication has 31 references indexed in Scilit:
- Ferroelectric Second-Order MemristorACS Applied Materials & Interfaces, 2019
- Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO2 Capacitor with Molybdenum Capping ElectrodePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2019
- Realizing ferroelectric Hf0.5Zr0.5O2 with elemental capping layersJournal of Vacuum Science & Technology B, 2017
- Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2Applied Physics Letters, 2017
- HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic ApplicationsIEEE Electron Device Letters, 2017
- Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin filmsApplied Physics Letters, 2016
- TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin filmsJournal of Applied Physics, 2015
- Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodesPhysica Status Solidi (RRL) – Rapid Research Letters, 2014
- Ferroelectricity in Simple Binary ZrO2 and HfO2Nano Letters, 2012
- Ferroelectricity in hafnium oxide thin filmsApplied Physics Letters, 2011