Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO2 Capacitor with Molybdenum Capping Electrode
- 1 March 2019
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The capping metal plays an important role on HfZrO 2 (HZO) crystallization for ferroelectric phase. The Mo top electrode MIM capacitor is demonstrated with high remnant polarization and endurance as compared with TaN electrode. The optimized data retention for 500°C annealing device presents (>30) $\mu$ C/cm 2 up to 2x10 4 sec and slightly degradation extrapolated to 3x10 8 sec (10 years). The Mo electrode exhibits higher 2P r and excellent endurance performance ((>10) 5 cycles) as compared with that of TaN electrode. It is beneficial for promising ultra-thin FE-HZO as the guidelines for low-power CMOS/memory applications.
Keywords
This publication has 8 references indexed in Scilit:
- Deformation behavior of Re alloyed Mo thin films on flexible substrates: In situ fragmentation analysis supported by first-principles calculationsScientific Reports, 2017
- Polarization-dependent photovoltaic effect in ferroelectric-semiconductor systemApplied Physics Letters, 2017
- Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power ElectronicsIEEE Electron Device Letters, 2015
- Ferroelectricity in Simple Binary ZrO2 and HfO2Nano Letters, 2012
- Ferroelectricity in hafnium oxide thin filmsApplied Physics Letters, 2011
- Can the subthreshold swing in a classical FET be lowered below 60 mV/decade?Published by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale DevicesNano Letters, 2007
- Why is nonvolatile ferroelectric memory field-effect transistor still elusive?IEEE Electron Device Letters, 2002