Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2
- 10 July 2017
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 111 (2), 022907
- https://doi.org/10.1063/1.4993739
Abstract
We report on the stabilization of the ferroelectric phase in Hf0.8Zr0.2O2 with a tungsten capping layer. Ferroelectricity is obtained in both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors with highly-doped Si serving as the bottom electrode in the MIS structure. Ferroelectricity is confirmed from both the electrical polarization-voltage (P-V) measurement and X-Ray Diffraction analysis that shows the presence of an orthorhombic phase. High-resolution Transmission Electron Microscopy and Energy Dispersive X-ray spectroscopy show minimal diffusion of W into the underlying Hf0.8Zr0.2O2 after the crystallization anneal. This is in contrast to significant Ti and N diffusion observed in ferroelectric HfxZr1-xO2 commonly capped with TiN.Keywords
Funding Information
- Berkeley Center for Negative Capacitance Transistors
- Lawrence Berkeley National Laboratory (DE-AC02-05CH11231)
This publication has 24 references indexed in Scilit:
- The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 filmScientific Reports, 2016
- Stabilizing the ferroelectric phase in doped hafnium oxideJournal of Applied Physics, 2015
- On the structural origins of ferroelectricity in HfO2 thin filmsApplied Physics Letters, 2015
- TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin filmsJournal of Applied Physics, 2015
- Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based FilmsAdvanced Materials, 2015
- Pathways towards ferroelectricity in hafniaPhysical Review B, 2014
- Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodesApplied Physics Letters, 2013
- Ferroelectricity in Simple Binary ZrO2 and HfO2Nano Letters, 2012
- Incipient Ferroelectricity in Al‐Doped HfO2 Thin FilmsAdvanced Functional Materials, 2012
- Ferroelectricity in hafnium oxide thin filmsApplied Physics Letters, 2011