TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
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- 6 April 2015
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 117 (13), 134105
- https://doi.org/10.1063/1.4916715
Abstract
Ferroelectric HfO2-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.Keywords
Funding Information
- National Science Foundation (DMR-1207293)
- Semiconductor Research Corporation (2013-RJ-2372G)
This publication has 44 references indexed in Scilit:
- Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0.5Zr0.5O2thin film on Ir electrodeJapanese Journal of Applied Physics, 2014
- Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate DielectricIEEE Electron Device Letters, 2013
- From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET DevicesIEEE Transactions on Electron Devices, 2013
- Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memoriesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2013
- Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperatureApplied Physics Letters, 2013
- Ferroelectricity in Simple Binary ZrO2 and HfO2Nano Letters, 2012
- Incipient Ferroelectricity in Al‐Doped HfO2 Thin FilmsAdvanced Functional Materials, 2012
- Ferroelectricity in Gd-Doped HfO2Thin FilmsECS Journal of Solid State Science and Technology, 2012
- Ferroelectricity in yttrium-doped hafnium oxideJournal of Applied Physics, 2011
- Ferroelectricity in hafnium oxide thin filmsApplied Physics Letters, 2011