HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications
- 26 April 2017
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 38 (6), 732-735
- https://doi.org/10.1109/led.2017.2698083
Abstract
We propose a HfZrO x (HZO)-based ferroelectric synapse device with multi-levels states of remnant polarization that is equivalent to multi-levels conductance states. By optimizing the pulse condition, we obtained 32 levels of remnant polarization states for both potentiation and depression. Furthermore, a ferroelectric field-effect transistor is simulated using the obtained multiple remnant polarization states. The simulation results show that linear and symmetric conductance states can be obtained by applying optimum potentiation and depression pulse conditions. A neural network was simulated using the proposed devices for pattern recognition. Using synapse parameters of the HZO-based ferroelectric device and a neural network simulator, we have confirmed that the pattern recognition accuracy of the MNIST data set is 84%. It shows that the HZO-based synapse device has potential for future high-density neuromorphic systems.Keywords
Funding Information
- Ministry of Trade, Industry & Energy (10067794)
- Korea Semiconductor Research Consortium Support Program for the Development of the Future Semiconductor Device
This publication has 12 references indexed in Scilit:
- Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight ElementIEEE Transactions on Electron Devices, 2015
- Optimization of Conductance Change in Pr1–xCaxMnO3-Based Synaptic Devices for Neuromorphic SystemsIEEE Electron Device Letters, 2015
- Ferroelectric Artificial Synapses for Recognition of a Multishaded ImageIEEE Transactions on Electron Devices, 2014
- Synaptic electronics: materials, devices and applicationsNanotechnology, 2013
- A ferroelectric memristorNature Materials, 2012
- Ferroelectricity in Simple Binary ZrO2 and HfO2Nano Letters, 2012
- Three-terminal ferroelectric synapse device with concurrent learning function for artificial neural networksJournal of Applied Physics, 2012
- Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$IEEE Electron Device Letters, 2012
- Device modeling of ferroelectric memory field-effect transistor (FeMFET)IEEE Transactions on Electron Devices, 2002
- Polycrystalline La0.5Sr0.5CoO3/PbZr0.53Ti0.47O3/ La0.5Sr0.5CoO3 ferroelectric capacitors on platinized silicon with no polarization fatigueApplied Physics Letters, 1994