Temperature dependence of resistive switching characteristics in NiO(111) films on metal layer

Abstract

Dense and uniform NiO(111) films are deposited on a Pt layer via magnetron sputtering. At temperatures of up to 80 ℃, the Ag/NiO(111)/Pt memory cells exhibit a stable bipolar resistive switching behaviour with a switching time of < 40 µs and a retention time of > 10⁴ s. Both the Arrhenius-type and Schottky-type current-temperature plots are well fitted by linear relationships, revealing that the electron transport in the high resistance state is governed by the Schottky tunnelling mechanism. The XPS depth profiles demonstrate that the NiO(111) films are highly oxygen deficient, and that oxygen-vacancy conductive filaments are responsible for the temperature-dependent resistive switching behaviour of the NiO(111) films.