Double wavelength selective GaAs/AlGaAs infrared detector device
- 20 April 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (16), 2011-2013
- https://doi.org/10.1063/1.107127
Abstract
We demonstrate the first GaAs/AlGaAs multiquantum well infrared detector device with double wavelength selectivity and high wavelength resolution. By applying an efficient light coupling mechanism, which is based upon the excitation and emission of surface plasmons, we have achieved a responsivity R of 2.20 A/W and a detectivity D* of 2.2×1011 cm √Hz/W for λ=7.38 μm at a temperature T=5 K for a 300 K background irradiance and a 90° field of view, which are one of the highest values reported to date.This publication has 12 references indexed in Scilit:
- Long wavelength quantum well detectors: can they compete?Surface Science, 1990
- Leaky modes in metal-semiconductor junctionsJournal of Applied Physics, 1989
- Polarization- and wavelength-selective photodetectorsJournal of the Optical Society of America A, 1988
- Quantum well avalanche multiplication initiated by 10 μm intersubband absorption and photoexcited tunnelingApplied Physics Letters, 1987
- Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivityApplied Physics Letters, 1987
- New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlatticesApplied Physics Letters, 1987
- Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguidesApplied Physics Letters, 1987
- Frequency- and polarization-selective Schottky detectors in the visible and near ultravioletOptics Letters, 1987
- Surface plasmon enhanced quantum efficiency of metal-insulator-semiconductor junctions in the visibleApplied Physics Letters, 1986
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985