Leaky modes in metal-semiconductor junctions
- 15 February 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (4), 1805-1808
- https://doi.org/10.1063/1.342912
Abstract
The reradiation of leaky surface plasmon polaritons into the semiconductor of a sinusoidally structured Schottky structure is investigated, to our knowledge for the first time. One of the two possible plasmon modes is bound at the metal-air interface, and is leaky at the interface between the metal film and the semiconductor. It is reradiated into the semiconductor either directly or by coupling with the grating. Therefore, emission of light from the back surface of the sample can be measured at two different angles of observation. The intensities of the two single emission beams and their ratios were measured at various thicknesses of the metal film and were found to be strongly dependent on this parameter.Keywords
This publication has 11 references indexed in Scilit:
- Polarization- and wavelength-selective photodetectorsJournal of the Optical Society of America A, 1988
- Surface plasma-enhanced internal photoemission in gallium arsenide Schottky diodesApplied Optics, 1987
- Frequency- and polarization-selective Schottky detectors in the visible and near ultravioletOptics Letters, 1987
- Surface plasmon enhanced quantum efficiency of metal-insulator-semiconductor junctions in the visibleApplied Physics Letters, 1986
- Enhanced quantum efficiency internal photoemission detectors by grating coupling to surface plasma wavesApplied Physics Letters, 1985
- Symmetry and the reflectivity of diffraction gratings at normal incidencePhysical Review B, 1985
- Surface plasmons on gratings: Coupling in the minigap regionsSolid State Communications, 1983
- Angular scan spectrum of a surface plasma excitation on a Schottky diodePhysics Letters A, 1983
- Theory of the response of schottky-barrier diodes to transverse magnetic surface wavesPhysics Letters A, 1981
- Surface Plasmons in Thin FilmsPhysical Review B, 1969