Surface plasmon enhanced quantum efficiency of metal-insulator-semiconductor junctions in the visible
- 24 February 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (8), 526-528
- https://doi.org/10.1063/1.96495
Abstract
Narrowband photosignals with quantum efficiencies up to 30% are observed on Al-SiO2-p-Si junctions. The frequency selective photosignals are due to surface plasmon polaritons confined to the metal-air interface excited by grating coupling. The best results are achieved with Ag-Al-SiO2-p-Si junctions providing a 12-nm linewidth and a signal to background ratio of 7:1 at a wavelength of 632.8 nm. The spectral sensitivity of these photodetectors is tunable over the whole visible spectrum either by a variation of the tilt angle or by a dielectric coating.Keywords
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