Temperature dependent space-charge-limited currents in amorphous and disordered semiconductors

Abstract

The temperature dependent space‐charge‐limited currents (SCLCs), manifested by the dependence of the apparent pre‐exponential factor of space‐charge‐limited (SCL) conductivity on the injection dependent activation energy, is examined. Starting from the exact theory of SCLC, the formula for the activation energy of SCL injection dependent conductivity was derived. The method of SCL currents seems to be a unique method to determine the true electrical conductivity pre‐exponential factor of the electrical conductivity. Systematic determination of the relation of the pre‐exponential factor of the conductivity on its activation energy during the measurements of voltage and temperature dependencies of SCL currents gives information on the reliability of the reconstruction of the density‐of‐electronic states.