Meyer-neldel rule in undoped a-Si:H, examined by tm-sclc method
- 1 February 1987
- journal article
- Published by Elsevier BV in Journal of Non-Crystalline Solids
- Vol. 90 (1-3), 179-182
- https://doi.org/10.1016/s0022-3093(87)80408-8
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- The effects of linear strain on the electronic properties of glow discharge amorphous siliconJournal of Non-Crystalline Solids, 1985
- The role of interface states in the evaluation of density of states from field effect measurements in dc-sputtered a-Si:HJournal of Non-Crystalline Solids, 1985
- Study of light-induced metastable defects by means of temperature-modulated space-charge-limited currentsPhilosophical Magazine Part B, 1985
- The bulk trap spectroscopy of solids by temperature-modulated space-charge-limited currents (TMSCLC) in the steady stateJournal of Physics C: Solid State Physics, 1985
- Space-charge-limited conduction for the determination of the midgap density of states in amorphous silicon: Theory and experimentPhysical Review B, 1984
- Adsorbate effects on the electrical conductance of a-Si: HPhilosophical Magazine Part B, 1982
- A new approach to the interpretation of transport results in a-SiPhilosophical Magazine Part B, 1980