Tail-state distribution in the density of states of p-type a-Si:H
- 1 November 1991
- journal article
- research article
- Published by Informa UK Limited in Philosophical Magazine Letters
- Vol. 64 (5), 321-326
- https://doi.org/10.1080/09500839108214628
Abstract
The methods of temperature-modulated space-charge-limited currents (TM-SCLC) and post transit photocurrent analysis (PTPA) have been used to study the tail-state distribution in density of states (DOS) of p-doped a-Si:H in annealed and light soaked state. It is shown that light soaking causes an increase in the midgap DOS at about 0·50–0·55 eV accompanied by a decrease in the DOS at about 0·40–0·45 eV.Keywords
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