Dislocation patterning and nanostructure engineering in compositionally graded Si 1 − xGe x Si
- 2 December 1995
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 157 (1-4), 132-136
- https://doi.org/10.1016/0022-0248(95)00381-9
Abstract
No abstract availableKeywords
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